Electrical characteristics of contacts to thin film N-polar n-type GaN
- Authors
- Kim, Hyunsoo; Ryou, Jae-Hyun; Dupuis, Russell D.; Lee, Sung-Nam; Park, Yongjo; Jeon, Joon-Woo; Seong, Tae-Yeon
- Issue Date
- 10-11월-2008
- Publisher
- AMER INST PHYSICS
- Keywords
- annealing; etching; gallium compounds; III-V semiconductors; impurities; platinum; Schottky barriers; semiconductor thin films
- Citation
- APPLIED PHYSICS LETTERS, v.93, no.19
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 93
- Number
- 19
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/122410
- DOI
- 10.1063/1.3013838
- ISSN
- 0003-6951
- Abstract
- The electrical characteristics of metallization contacts to a thin film N-polar n-type GaN layer fabricated by a laser lift-off process combined with a dry etching are investigated. It is shown that for Pt Schottky contacts, the Schottky barrier height of the N-polar GaN is 1.27 eV, which is larger than that (1.23 eV) of reference Ga-polar GaN. Ti/Al Ohmic contacts to the N-polar GaN experience thermal degradation even at 400 degrees C. Such annealing-induced degradation is explained in terms of the presence of the complex surface states of the N-polar GaN, which consists of impurities and process-induced donorlike and acceptorlike defects.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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