Effect of Patterned Ion-Implanted Sapphire on Ultraviolet Light-Emitting Diodes

Abstract

Ultraviolet (UV) diodes (LEDs) were fabricated oil patterned-ion-implanted sapphire (PIIS) substrates using metalorganic chemical vapor deposition. The crystal qualities of the n-GaN epilayer grown on the patterned-N+-ion-implanted sapphire substrate Were improved compared with that of the n-GaN epilayer grown oil a conventional sapphire substrate.. The optical properties of the undoped GaN and n-GaN epilayers grown on the PIIS substrate were improved. The light intensity of the UV LED at 100 mA oil the PIIS chip was 78% higher than that of the conventional LED. This increase in light intensity is Clue to the relaxation of the misfit strain at hi-h temperature and the contribution of the internal free energies to the enhancement in structural and optical properties. [DOI: 10.1143/JJAP.47.8265]