Effects of the AlSb Buffer Layer and the InAs Channel Thickness on the Electrical Properties of InAs/AlSb-Based 2-DEG HEMT Structures

Abstract

In this study, the effects of various AlSb buffer layers and InAs channel thicknesses on the electrical properties of InAs/AlSb-based 2-dimensional-electron-gas (2-DEG) inverted-High Electron Mobility Transistor (HEMT) structures for applications to spin-Field Effective Transistor (FET) is reported. The optimized similar to 11-nm-thick InAs/AlSb HEMT on AlSb (0.5 mu m)/10 repetition of GaSb/AlSb superlattices/AlSb (1 mu m) shows noticeable values of the electron mobility (similar to 106,900 cm(2)/Vs at 77 K and 25,870 cm(2)/Vs at 300 K) and those are comparable to the state-of-the-art, considering impurity scattering due to doping.