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Effects of the AlSb Buffer Layer and the InAs Channel Thickness on the Electrical Properties of InAs/AlSb-Based 2-DEG HEMT Structures
- Authors
- Shin, S. H.; Lim, J. Y.; Song, J. D.; Kim, H. J.; Han, S. H.; Kim, T. G.
- Issue Date
- 11월-2008
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Molecular beam epitaxy; AlSb; InAs; 2-DEG; HEMT
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.5, pp.2719 - 2724
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 53
- Number
- 5
- Start Page
- 2719
- End Page
- 2724
- ISSN
- 0374-4884
- Abstract
- In this study, the effects of various AlSb buffer layers and InAs channel thicknesses on the electrical properties of InAs/AlSb-based 2-dimensional-electron-gas (2-DEG) inverted-High Electron Mobility Transistor (HEMT) structures for applications to spin-Field Effective Transistor (FET) is reported. The optimized similar to 11-nm-thick InAs/AlSb HEMT on AlSb (0.5 mu m)/10 repetition of GaSb/AlSb superlattices/AlSb (1 mu m) shows noticeable values of the electron mobility (similar to 106,900 cm(2)/Vs at 77 K and 25,870 cm(2)/Vs at 300 K) and those are comparable to the state-of-the-art, considering impurity scattering due to doping.
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