Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors
DC Field | Value | Language |
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dc.contributor.author | Yoon, Changjoon | - |
dc.contributor.author | Kang, Jeongmin | - |
dc.contributor.author | Yeom, Donghyuk | - |
dc.contributor.author | Jeong, Dong-Young | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-09T03:13:58Z | - |
dc.date.available | 2021-09-09T03:13:58Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-11 | - |
dc.identifier.issn | 0038-1098 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122523 | - |
dc.description.abstract | Back- and top-gate field-effect transistors (FETs) with channels composed of p-type Si nanowires were fabricated by a conventional photolithographic process and their electrical properties were characterized by conventional current-voltage (I-V) measurements. For a representative top-gate FET, the peak transconductance was enhanced from 2.24 to 72.2 nS, the field-effect mobility from 1.7 to 3.1 cm(2)/VS, and the I-on/I-off ratio from 2.21 to 2.49 x 10(6), compared with those of a representative back-gate FET. The observed improvement of the electrical characteristics is mostly attributed to both the top-gate geometry and the relatively thin gate layer. (C) 2008 Elsevier Ltd. All rights reserved. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | - |
dc.subject | SILICON NANOWIRES | - |
dc.subject | CARBON NANOTUBE | - |
dc.subject | ETCH RATES | - |
dc.subject | GROWTH | - |
dc.subject | DEVICES | - |
dc.title | Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1016/j.ssc.2008.09.011 | - |
dc.identifier.scopusid | 2-s2.0-52949113806 | - |
dc.identifier.wosid | 000260907800009 | - |
dc.identifier.bibliographicCitation | SOLID STATE COMMUNICATIONS, v.148, no.7-8, pp.293 - 296 | - |
dc.relation.isPartOf | SOLID STATE COMMUNICATIONS | - |
dc.citation.title | SOLID STATE COMMUNICATIONS | - |
dc.citation.volume | 148 | - |
dc.citation.number | 7-8 | - |
dc.citation.startPage | 293 | - |
dc.citation.endPage | 296 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | SILICON NANOWIRES | - |
dc.subject.keywordPlus | CARBON NANOTUBE | - |
dc.subject.keywordPlus | ETCH RATES | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordAuthor | Nanostructures | - |
dc.subject.keywordAuthor | Semiconductors | - |
dc.subject.keywordAuthor | Nanofabrications | - |
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