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Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors
- Issue Date
- 11월-2008
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Nanostructures; Semiconductors; Nanofabrications
- Citation
- SOLID STATE COMMUNICATIONS, v.148, no.7-8, pp.293 - 296
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID STATE COMMUNICATIONS
- Volume
- 148
- Number
- 7-8
- Start Page
- 293
- End Page
- 296
- ISSN
- 0038-1098
- Abstract
- Back- and top-gate field-effect transistors (FETs) with channels composed of p-type Si nanowires were fabricated by a conventional photolithographic process and their electrical properties were characterized by conventional current-voltage (I-V) measurements. For a representative top-gate FET, the peak transconductance was enhanced from 2.24 to 72.2 nS, the field-effect mobility from 1.7 to 3.1 cm(2)/VS, and the I-on/I-off ratio from 2.21 to 2.49 x 10(6), compared with those of a representative back-gate FET. The observed improvement of the electrical characteristics is mostly attributed to both the top-gate geometry and the relatively thin gate layer. (C) 2008 Elsevier Ltd. All rights reserved.
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