Model-based analysis of the silica glass film etch mechanism in CF(4)/O(2) inductively coupled plasma
DC Field | Value | Language |
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dc.contributor.author | Kim, Mansu | - |
dc.contributor.author | Min, Nam-Ki | - |
dc.contributor.author | Efremov, Alexander | - |
dc.contributor.author | Lee, Hyun Woo | - |
dc.contributor.author | Park, Chi-Sun | - |
dc.contributor.author | Kwon, Kwang-Ho | - |
dc.date.accessioned | 2021-09-09T04:06:50Z | - |
dc.date.available | 2021-09-09T04:06:50Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-10 | - |
dc.identifier.issn | 0957-4522 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/122671 | - |
dc.description.abstract | The analysis of the Er-doped silica glass films (62%SiO(2)-30%B(2)O(3)-8%P(2)O(5) + 0.2 wt%. Er(2)O(3)) etch mechanism in the CF(4)/O(2) inductively coupled plasma was carried out using the combination of simplified models for plasma chemistry and etch kinetics. As the O(2) mixing ratio in the CF(4)/O(2) plasma increases from 0% to 30%, the etch rate decreases monotonically in the range of 385-190 nm/min that contradicts with the behavior of F atom density and flux. From the model-based analysis, it was found that, at low ion bombardment energies, the etch process followed the formal kinetics of ion-assisted chemical reaction and was controlled by both neutral and ion fluxes. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER | - |
dc.subject | HIGH-DENSITY | - |
dc.subject | WAVE-GUIDES | - |
dc.subject | THIN-FILMS | - |
dc.subject | SURFACE KINETICS | - |
dc.subject | GLOBAL-MODEL | - |
dc.subject | DISCHARGES | - |
dc.subject | CF4 | - |
dc.subject | TEMPERATURES | - |
dc.subject | COMPONENTS | - |
dc.subject | CL-2/AR | - |
dc.title | Model-based analysis of the silica glass film etch mechanism in CF(4)/O(2) inductively coupled plasma | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Min, Nam-Ki | - |
dc.contributor.affiliatedAuthor | Kwon, Kwang-Ho | - |
dc.identifier.doi | 10.1007/s10854-007-9425-z | - |
dc.identifier.scopusid | 2-s2.0-46849119789 | - |
dc.identifier.wosid | 000257208300003 | - |
dc.identifier.bibliographicCitation | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.19, no.10, pp.957 - 964 | - |
dc.relation.isPartOf | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | - |
dc.citation.title | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | - |
dc.citation.volume | 19 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 957 | - |
dc.citation.endPage | 964 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | HIGH-DENSITY | - |
dc.subject.keywordPlus | WAVE-GUIDES | - |
dc.subject.keywordPlus | THIN-FILMS | - |
dc.subject.keywordPlus | SURFACE KINETICS | - |
dc.subject.keywordPlus | GLOBAL-MODEL | - |
dc.subject.keywordPlus | DISCHARGES | - |
dc.subject.keywordPlus | CF4 | - |
dc.subject.keywordPlus | TEMPERATURES | - |
dc.subject.keywordPlus | COMPONENTS | - |
dc.subject.keywordPlus | CL-2/AR | - |
dc.subject.keywordAuthor | silica | - |
dc.subject.keywordAuthor | CF4/O2 etching mechanism | - |
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