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Light extraction enhancement of GaN-based light emitting diodes using MgF2/Al omnidirectional reflectors
- Authors
- Kim, Hyunsoo; Lee, Sung-Nam; Park, Youngjo; Kim, Kyoung-Kook; Kwak, Joon Seop; Seong, Tae-Yeon
- Issue Date
- 1-Sep-2008
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.104, no.5
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 104
- Number
- 5
- ISSN
- 0021-8979
- Abstract
- We report on the enhancement of the light extraction of GaN-based light emitting diodes (LEDs) by using MgF2/Al omnidirectional reflectors (ODRs). The ODRs consisting of a quarter-wavelength-thick MgF2 having a refractive index of 1.39 and Al metal produce a high-angle-integrated reflectivity of 96.6%. To optimize the electrical injection and light reflection, the MgF2/Al ODRs are combined with Pd/Ag metallic reflectors using mesh configuration. Compared to reference LEDs, LEDs fabricated with the MgF2/Al ODRs show an enhanced output power by 23% and a slight increase in the forward voltage by 0.18 V, leading to the improvement in power efficiency by 17%. (c) 2008 American Institute of Physics.
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Related Researcher
- SEONG, TAE YEON
- College of Engineering (Department of Materials Science and Engineering)