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Correlation between charge trap distribution and memory characteristics in metal/oxide/nitride/oxide/silicon devices with two different blocking oxides, Al2O3 and SiO2

Authors
Seo, Y. J.Kim, K. C.Kim, H. D.Joo, M. S.An, H. M.Kim, T. G.
Issue Date
11-8월-2008
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v.93, no.6
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
93
Number
6
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/122863
DOI
10.1063/1.2970990
ISSN
0003-6951
Abstract
We examined the origin of the charge traps in bothSiO(2)/Si3N4/SiO2 (ONO) and Al2O3/Si3N4/SiO2 (ANO) structures and their effect on the memory characteristics by capacitance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). A larger memory window was observed by C-V for ANO, due to its higher trap density. The DLTS showed that nitride traps are dominant in ANO, while more Si/SiO2 interface-related traps are observed in ONO. The ANO capacitor outperforms the ONO one in terms of both the program efficiency and retention, which is attributed to the reduced number of interface traps in ANO. (C) 2008 American Institute of Physics.
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공과대학 (전기전자공학부)
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