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Effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs films studied by planar Hall effect
- Authors
- Yea, Sun-youn; Chung, S. J.; Son, Hyunji; Shin, D. Y.; Lee, Sanghoon; Liu, X.; Furdyna, J. K.
- Issue Date
- 8월-2008
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- semiconductor; ferromagentism; anisotropy; planar; Hall effect
- Citation
- SOLID STATE COMMUNICATIONS, v.147, no.7-8, pp.309 - 312
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID STATE COMMUNICATIONS
- Volume
- 147
- Number
- 7-8
- Start Page
- 309
- End Page
- 312
- ISSN
- 0038-1098
- Abstract
- We have investigated the effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs film using the planar Hall effect (PHE). Different thicknesses were obtained on a single GaMnAs specimen by using different etching times on selected areas, and the PHE was then measured using the Hall bar configurations patterned on the area. Cubic and uniaxial anisotropy fields were obtained for the films by fitting the angular dependence of the PHE data to the Stoner-Wohlfarth rnodel. The results exhibited a very systematic dependence on the etched thickness, demonstrating that the chemical etching process significantly affects the magnetic anisotropy of ferromagnetic GaMnAs films. (C) 2008 Elsevier Ltd. All rights reserved.
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