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Effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs films studied by planar Hall effect

Authors
Yea, Sun-younChung, S. J.Son, HyunjiShin, D. Y.Lee, SanghoonLiu, X.Furdyna, J. K.
Issue Date
8월-2008
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Keywords
semiconductor; ferromagentism; anisotropy; planar; Hall effect
Citation
SOLID STATE COMMUNICATIONS, v.147, no.7-8, pp.309 - 312
Indexed
SCIE
SCOPUS
Journal Title
SOLID STATE COMMUNICATIONS
Volume
147
Number
7-8
Start Page
309
End Page
312
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/122921
DOI
10.1016/j.ssc.2008.05.037
ISSN
0038-1098
Abstract
We have investigated the effect of chemical etching on magnetic anisotropy of ferromagnetic GaMnAs film using the planar Hall effect (PHE). Different thicknesses were obtained on a single GaMnAs specimen by using different etching times on selected areas, and the PHE was then measured using the Hall bar configurations patterned on the area. Cubic and uniaxial anisotropy fields were obtained for the films by fitting the angular dependence of the PHE data to the Stoner-Wohlfarth rnodel. The results exhibited a very systematic dependence on the etched thickness, demonstrating that the chemical etching process significantly affects the magnetic anisotropy of ferromagnetic GaMnAs films. (C) 2008 Elsevier Ltd. All rights reserved.
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