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NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al2O3 gate layers
- Authors
- Yeom, Donghyuk; Keem, Kihyun; Kang, Jeongmin; Jeong, Dong-Young; Yoon, Changjoon; Kim, Dongseung; Kim, Sangsig
- Issue Date
- 2-Jul-2008
- Publisher
- IOP PUBLISHING LTD
- Keywords
- nanowires; ZnO; FET; logic; inverter
- Citation
- NANOTECHNOLOGY, v.19, no.26
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 19
- Number
- 26
- ISSN
- 0957-4484
- Abstract
- Electrical characteristics of NOT and NAND logic circuits fabricated using top-gate ZnO nanowire field-effect transistors (FETs) with high-k Al2O3 gate layers were investigated in this study. To form a NOT logic circuit, two identical FETs whose I-on/I-off ratios were as high as similar to 10(8) were connected in series in a single ZnO nanowire channel, sharing a common source electrode. Its voltage transfer characteristics exhibited an inverting operation and its logic swing was 98%. In addition, the characteristics of a NAND logic circuit composed of three top-gate FETs connected in series in a single nanowire channel are discussed in this paper.
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Related Researcher
- Kim, Sang sig
- College of Engineering (School of Electrical Engineering)