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Growth of boron-doped-ZnO by RF magnetron sputtering for ClGS solar cells
- Authors
- Hur, Jae-Sung; Kim, Jihye; Jang, Samseok; Song, Jung-Bin; Byun, Dongjin; Son, Chang-Sik; Yun, Jae Ho; Yoon, Kyung Hoon
- Issue Date
- 7월-2008
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- B-doped ZnO; transparent conductive oxide (TCO); CIGS solar cell
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.1, pp.442 - 445
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 53
- Number
- 1
- Start Page
- 442
- End Page
- 445
- ISSN
- 0374-4884
- Abstract
- The cell performance of CuIn1-x. GaxSe2 (CIGS) thin-film solar cells fabricated using boron-doped ZnO window layers was evaluated. Boron-doped ZnO was deposited by RF magnetron sputtering using a zinc-oxide target containing 3 wt.% B2O3. Its resistivity was 1.36 x 10(-2) Q-cm and its transmittance was 85 similar to 89 % in the wavelength range from 400 nm to 1000 nm. The transmittance was higher in the near-infrared region than in the other regions. Thus, boron-doped ZnO thin films would be suitable for use as transparent window layers of CIGS solar cells having a higher quantum efficiency on the near-infrared region. The FF and the conversion efficiency were obtained from the J-V measurements and their values were 0.42 and 8.15 %, respectively.
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