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Growth of boron-doped-ZnO by RF magnetron sputtering for ClGS solar cells

Authors
Hur, Jae-SungKim, JihyeJang, SamseokSong, Jung-BinByun, DongjinSon, Chang-SikYun, Jae HoYoon, Kyung Hoon
Issue Date
Jul-2008
Publisher
KOREAN PHYSICAL SOC
Keywords
B-doped ZnO; transparent conductive oxide (TCO); CIGS solar cell
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.1, pp 442 - 445
Pages
4
Indexed
SCIE
SCOPUS
KCI
Journal Title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume
53
Number
1
Start Page
442
End Page
445
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/123299
ISSN
0374-4884
1976-8524
Abstract
The cell performance of CuIn1-x. GaxSe2 (CIGS) thin-film solar cells fabricated using boron-doped ZnO window layers was evaluated. Boron-doped ZnO was deposited by RF magnetron sputtering using a zinc-oxide target containing 3 wt.% B2O3. Its resistivity was 1.36 x 10(-2) Q-cm and its transmittance was 85 similar to 89 % in the wavelength range from 400 nm to 1000 nm. The transmittance was higher in the near-infrared region than in the other regions. Thus, boron-doped ZnO thin films would be suitable for use as transparent window layers of CIGS solar cells having a higher quantum efficiency on the near-infrared region. The FF and the conversion efficiency were obtained from the J-V measurements and their values were 0.42 and 8.15 %, respectively.
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