Photocurrent characteristics of solution-processed HgTe nanoparticle thin films under the illumination of 1.3 mu m wavelength light
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Seong, Hojun | - |
dc.contributor.author | Cho, Kyoungah | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2021-09-09T07:15:21Z | - |
dc.date.available | 2021-09-09T07:15:21Z | - |
dc.date.created | 2021-06-10 | - |
dc.date.issued | 2008-07 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/123331 | - |
dc.description.abstract | The photocurrent characteristics of HgTe nanoparticle (NP) thin films fabricated on glass substrates were investigated under the illumination of 1.3 mu m wavelength light in this work. The photocurrent obtained from an NP thin film with a vertical structure was 119 mu A in magnitude at an applied voltage of 2 V. The magnitude of the photocurrent for an NP thin film with a lateral structure was 23.8 nA at 10 V. Nevertheless, the relative magnitude of the photocurrent measured as a function of the chopping frequency was largely the same for the thin films with both the lateral and the vertical structures. The frequency-dependent photocurrent mechanism of the NP thin films will be discussed in detail in this paper. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | QUANTUM-DOT | - |
dc.subject | OPTOELECTRONIC CHARACTERISTICS | - |
dc.subject | OPTICAL-PROPERTIES | - |
dc.subject | SUPERLATTICE | - |
dc.subject | NANOCRYSTALS | - |
dc.subject | CONFINEMENT | - |
dc.title | Photocurrent characteristics of solution-processed HgTe nanoparticle thin films under the illumination of 1.3 mu m wavelength light | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.1088/0268-1242/23/7/075011 | - |
dc.identifier.scopusid | 2-s2.0-47749114966 | - |
dc.identifier.wosid | 000257201100012 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.23, no.7 | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 23 | - |
dc.citation.number | 7 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | QUANTUM-DOT | - |
dc.subject.keywordPlus | OPTOELECTRONIC CHARACTERISTICS | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | SUPERLATTICE | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | CONFINEMENT | - |
dc.subject.keywordAuthor | 광전류 | - |
dc.subject.keywordAuthor | 나노입자 | - |
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