Photocurrent characteristics of solution-processed HgTe nanoparticle thin films under the illumination of 1.3 mu m wavelength light
- Authors
- Seong, Hojun; Cho, Kyoungah; Kim, Sangsig
- Issue Date
- 7월-2008
- Publisher
- IOP PUBLISHING LTD
- Keywords
- 광전류; 나노입자
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.23, no.7
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 23
- Number
- 7
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/123331
- DOI
- 10.1088/0268-1242/23/7/075011
- ISSN
- 0268-1242
- Abstract
- The photocurrent characteristics of HgTe nanoparticle (NP) thin films fabricated on glass substrates were investigated under the illumination of 1.3 mu m wavelength light in this work. The photocurrent obtained from an NP thin film with a vertical structure was 119 mu A in magnitude at an applied voltage of 2 V. The magnitude of the photocurrent for an NP thin film with a lateral structure was 23.8 nA at 10 V. Nevertheless, the relative magnitude of the photocurrent measured as a function of the chopping frequency was largely the same for the thin films with both the lateral and the vertical structures. The frequency-dependent photocurrent mechanism of the NP thin films will be discussed in detail in this paper.
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