The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films
- Authors
- Won, Jae Ho; Kim, Ki Hyun; Suh, Jong Hee; Cho, Shin Hang; Cho, Pyong Kon; Hong, Jin Ki; Kim, Sun Ung
- Issue Date
- 11-6월-2008
- Publisher
- ELSEVIER
- Keywords
- X-ray sensitivity; polycrystalline CdZnTe thick films; charge carrier transport
- Citation
- NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, v.591, no.1, pp.206 - 208
- Indexed
- SCIE
SCOPUS
- Journal Title
- NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
- Volume
- 591
- Number
- 1
- Start Page
- 206
- End Page
- 208
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/123383
- DOI
- 10.1016/j.nima.2008.03.057
- ISSN
- 0168-9002
- Abstract
- The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 mu m thickness were about 2.2 and 6.2 mu C/cm(2)/R in the ohmic-type and Schottky-type detector at 0.83 V/mu m, respectively. (C) 2008 Elsevier B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - ETC > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.