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The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films

Authors
Won, Jae HoKim, Ki HyunSuh, Jong HeeCho, Shin HangCho, Pyong KonHong, Jin KiKim, Sun Ung
Issue Date
11-6월-2008
Publisher
ELSEVIER
Keywords
X-ray sensitivity; polycrystalline CdZnTe thick films; charge carrier transport
Citation
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, v.591, no.1, pp.206 - 208
Indexed
SCIE
SCOPUS
Journal Title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Volume
591
Number
1
Start Page
206
End Page
208
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/123383
DOI
10.1016/j.nima.2008.03.057
ISSN
0168-9002
Abstract
The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 mu m thickness were about 2.2 and 6.2 mu C/cm(2)/R in the ohmic-type and Schottky-type detector at 0.83 V/mu m, respectively. (C) 2008 Elsevier B.V. All rights reserved.
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