Investigation on the electric properties of Bi1.5ZnNb1.5O7 thin films grown on TiN substrate for MIM capacitors
- Authors
- Hong, Kyoung Pyo; Cho, Kyung-Hoon; Jeong, Young Hun; Nahm, Sahn; Kang, Chong-Yun; Yoon, Seok-Jin
- Issue Date
- 4월-2008
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Bi1.5ZnNb1.5O7 (BZN); high-k; metal-insulator-metal (MIM) capacitor; temperature coefficient of capacitance (TCC); voltage coefficient of capacitance (VCC)
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.29, no.4, pp.334 - 337
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 29
- Number
- 4
- Start Page
- 334
- End Page
- 337
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/123771
- DOI
- 10.1109/LED.2008.918271
- ISSN
- 0741-3106
- Abstract
- A small crystalline phase was formed in the Bi1.5ZnNb1.5O7 (BZN) film grown at 300 degrees C on TiN/SiO2/Si substrate using RF-magnetron sputtering. A 46-nm-thick BZN film exhibited a high capacitance density of 13.6 fF /mu m(2) at 100 kHz with a dielectric constant of 71, which did not change even in the gigahertz range (1-6 GHz). The quality factor was high, approximately 50, at 2.5 GHz. The leakage-current density was low, approximately 5.66 nA/cm(2), at 2 V. The quadratic voltage and temperature coefficients of capacitance were approximately 631 ppm/V-2 and 149 ppm/degrees C at 100 kHz, respectively. These results indicate that the BZN film grown on TiN substrate at 300 degrees C can be a good candidate material for metal-insulator-metal capacitors.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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