Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p-contacts
- Authors
- Kim, Hyunsoo; Cho, Jaehee; Park, Yongjo; Seong, Tae-Yeon
- Issue Date
- 3-3월-2008
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.92, no.9
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 92
- Number
- 9
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/123915
- DOI
- 10.1063/1.2844887
- ISSN
- 0003-6951
- Abstract
- The origins of leakage currents and passivation effects of GaN-based light emitting diodes fabricated with Ag p-contacts have been investigated by electrical measurements. A significant increase in reverse leakage current is attributed to the surface migration of Ag. A passivation of mesa sidewalls by SiO2 is found to be effective in suppressing the reverse leakage. However, the passivation results in a somewhat increase in the forward leakage at moderate voltages. Such forward leakage is explained in terms of the presence of local deep-level states in p-GaN generated during SiO2 deposition, acting as a parasitic diode with a lower barrier height. (C) 2008 American Institute of Physics.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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