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Fabrication and electrical characterization of planar resonant tunneling devices incorporating InAs self-assembled quantum dots
- Issue Date
- Dec-1999
- Publisher
- ELSEVIER
- Keywords
- planar device; self-assembled quantum dot; resonant tunneling
- Citation
- PHYSICA B-CONDENSED MATTER, v.272, no.1-4, pp.18 - 20
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICA B-CONDENSED MATTER
- Volume
- 272
- Number
- 1-4
- Start Page
- 18
- End Page
- 20
- ISSN
- 0921-4526
- Abstract
- We fabricated and characterized planar quantum dot devices with a single self-assembled quantum dot placed in between two aluminum electrodes separated by 30 nm. The current-voltage characteristics measured from the devices exhibit negative differential resistances at temperatures above 77 K. They are attributed to the 3D-0D-3D resonant tunneling through the InAs self-assembled quantum dot. (C) 1999 Elsevier Science B.V. All rights reserved.
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