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Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices
- Issue Date
- Dec-1998
- Publisher
- JAPAN J APPLIED PHYSICS
- Keywords
- electron-beam; carbon; current-voltage; nano-devices; single electron tunneling; Coulomb staircases
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.37, no.12B, pp.6996 - 6997
- Indexed
- SCIE
SCOPUS
- Volume
- 37
- Number
- 12B
- Start Page
- 6996
- End Page
- 6997
- ISSN
- 0021-4922
- Abstract
- Electrical properties of the electron-beam induced cal bon contamination layers have been reported. Contacts to the contamination layers are achieved by a simple deposition of aluminum and the current-voltage characteristics are successfully measured. A double junction structure, with the size smaller than 10 nm, has been fabricated by a one-step electron beam irradiation and it exhibits Coulomb staircases at room temperature.
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