Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals

Abstract

Transparent and flexible thin film transistors (TFTs) with channel layers composed of sintered HgTe nanocrystals were fabricated on top of UV/ozone treated plastic substrates and their electrical properties were characterized. A representative TFT with a channel layer composed of sintered HgTe nanocrystals revealed typical p-type characteristics, an on/off current ratio of similar to 10(3) and a field-effect mobility of 4.1 cm(2) V(-1) s(-1). When the substrate was bent until the bending radius of the substrate reached 2.4 cm, which corresponded to a strain of 0.83% that the HgTe thin film experienced, the TFT exhibited an on/off current ratio of similar to 10(3) and a field-effect mobility of 4.0 cm(2) V(-1) s(-1).