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Transparent and flexible thin-film transistors with channel layers composed of sintered HgTe nanocrystals

Authors
Jang, JaewonCho, KyoungahLee, Sang HeonKim, Sangsig
Issue Date
9-1월-2008
Publisher
IOP PUBLISHING LTD
Citation
NANOTECHNOLOGY, v.19, no.1
Indexed
SCIE
SCOPUS
Journal Title
NANOTECHNOLOGY
Volume
19
Number
1
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/124443
DOI
10.1088/0957-4484/19/01/015204
ISSN
0957-4484
Abstract
Transparent and flexible thin film transistors (TFTs) with channel layers composed of sintered HgTe nanocrystals were fabricated on top of UV/ozone treated plastic substrates and their electrical properties were characterized. A representative TFT with a channel layer composed of sintered HgTe nanocrystals revealed typical p-type characteristics, an on/off current ratio of similar to 10(3) and a field-effect mobility of 4.1 cm(2) V(-1) s(-1). When the substrate was bent until the bending radius of the substrate reached 2.4 cm, which corresponded to a strain of 0.83% that the HgTe thin film experienced, the TFT exhibited an on/off current ratio of similar to 10(3) and a field-effect mobility of 4.0 cm(2) V(-1) s(-1).
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공과대학 (전기전자공학부)
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