Capacitance-voltage Characteristics of MOS Capacitors with Ge Nanocrystals Embedded in HfO₂ Gate Material
DC Field | Value | Language |
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dc.contributor.author | 박병준 | - |
dc.contributor.author | 이혜령 | - |
dc.contributor.author | 조경아 | - |
dc.contributor.author | 김상식 | - |
dc.date.accessioned | 2021-09-09T13:52:53Z | - |
dc.date.available | 2021-09-09T13:52:53Z | - |
dc.date.created | 2021-06-17 | - |
dc.date.issued | 2008 | - |
dc.identifier.issn | 1226-7945 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/124726 | - |
dc.description.abstract | Capacitance versus voltage (C-V) characteristics of Ge-nanocrystal (NC)-embedded metal-oxide- semiconductor (MOS) capacitors with HfO₂ gate material were investigated in this work. The current versus voltage (I-V) curves obtained from Ge-NC-embedded MOS capacitors fabricated with the NH3 annealed HfO₂ gate material reveal the reduction of leakage current, compared with those of MOS capacitors fabricated with the O₂ annealed HfO₂ gate material. The C-V curves of the Ge-NC-embedded MOS capacitor with HfO₂ gate material annealed in NH₃ ambient exhibit counterclockwise hysteresis loop of about 3.45 V memory window when bias voltage was varied from -10 to + 10 V. The observed hysteresis loop indicates the presence of charge storages in the Ge NCs caused by the Fowler-Nordheim (F-N) tunneling. In addition, capacitance versus time characteristics of Ge-NC-embedded MOS capacitors with HfO₂ gate material were analyzed to investigate their retention property. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | 한국전기전자재료학회 | - |
dc.title | Capacitance-voltage Characteristics of MOS Capacitors with Ge Nanocrystals Embedded in HfO₂ Gate Material | - |
dc.title.alternative | Capacitance-voltage Characteristics of MOS Capacitors with Ge Nanocrystals Embedded in HfO₂ Gate Material | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | 김상식 | - |
dc.identifier.bibliographicCitation | 전기전자재료학회논문지, v.21, no.8, pp.699 - 705 | - |
dc.relation.isPartOf | 전기전자재료학회논문지 | - |
dc.citation.title | 전기전자재료학회논문지 | - |
dc.citation.volume | 21 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 699 | - |
dc.citation.endPage | 705 | - |
dc.type.rims | ART | - |
dc.identifier.kciid | ART001268501 | - |
dc.description.journalClass | 2 | - |
dc.description.journalRegisteredClass | kci | - |
dc.subject.keywordAuthor | Germanium | - |
dc.subject.keywordAuthor | Memories | - |
dc.subject.keywordAuthor | Nanotechnology | - |
dc.subject.keywordAuthor | HfO₂ | - |
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