Capacitance-voltage Characteristics of MOS Capacitors with Ge Nanocrystals Embedded in HfO₂ Gate MaterialCapacitance-voltage Characteristics of MOS Capacitors with Ge Nanocrystals Embedded in HfO₂ Gate Material
- Other Titles
- Capacitance-voltage Characteristics of MOS Capacitors with Ge Nanocrystals Embedded in HfO₂ Gate Material
- Authors
- 박병준; 이혜령; 조경아; 김상식
- Issue Date
- 2008
- Publisher
- 한국전기전자재료학회
- Keywords
- Germanium; Memories; Nanotechnology; HfO₂
- Citation
- 전기전자재료학회논문지, v.21, no.8, pp.699 - 705
- Indexed
- KCI
- Journal Title
- 전기전자재료학회논문지
- Volume
- 21
- Number
- 8
- Start Page
- 699
- End Page
- 705
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/124726
- ISSN
- 1226-7945
- Abstract
- Capacitance versus voltage (C-V) characteristics of Ge-nanocrystal (NC)-embedded metal-oxide- semiconductor (MOS) capacitors with HfO₂ gate material were investigated in this work. The current versus voltage (I-V) curves obtained from Ge-NC-embedded MOS capacitors fabricated with the NH3 annealed HfO₂ gate material reveal the reduction of leakage current, compared with those of MOS capacitors fabricated with the O₂ annealed HfO₂ gate material. The C-V curves of the Ge-NC-embedded MOS capacitor with HfO₂ gate material annealed in NH₃ ambient exhibit counterclockwise hysteresis loop of about 3.45 V memory window when bias voltage was varied from -10 to + 10 V. The observed hysteresis loop indicates the presence of charge storages in the Ge NCs caused by the Fowler-Nordheim (F-N) tunneling. In addition, capacitance versus time characteristics of Ge-NC-embedded MOS capacitors with HfO₂ gate material were analyzed to investigate their retention property.
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