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On the Etching Mechanism of Parylene-C in Inductively Coupled O₂ PlasmaOn the Etching Mechanism of Parylene-C in Inductively Coupled O₂ Plasma
- Other Titles
- On the Etching Mechanism of Parylene-C in Inductively Coupled O₂ Plasma
- Authors
- Shutov Dmitriy; 김성일; 권광호
- Issue Date
- 2008
- Publisher
- 한국전기전자재료학회
- Keywords
- Parylene-C; Oxygen plasma; Etching mechanism; Plasma modeling
- Citation
- Transactions on Electrical and Electronic Materials, v.9, no.4, pp.156 - 162
- Indexed
- KCI
- Journal Title
- Transactions on Electrical and Electronic Materials
- Volume
- 9
- Number
- 4
- Start Page
- 156
- End Page
- 162
- ISSN
- 1229-7607
- Abstract
- We report results on a study of inductively coupled plasma (ICP) etching of Parylene-C (poly-monochloro-para-xylylene) films using an O₂ gas. Effects of process parameters on etch rates were investigated and are discussed in this article from the standpoint of plasma parameter measurements, performed using a Langmuir probe and modeling calculation. Process parameters of interest include ICP source power and pressure. It was shown that major etching agent of polymer films was oxygen atoms O(³P). At the same time it was proposed that positive ions were not effective etchant, but ions played an important role as effective channel of energy transfer from plasma towards the polymer.
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