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Possible ohmic mechanisms of Ag/indium tin oxide p-type contacts for high-brightness GaN-based light emitting diodes

Authors
Song, June-OHong, Hyun-GiJeon, Joon-WooSohn, Jung-InnJang, Ja-SoonSeong, Tae-Yeon
Issue Date
2008
Publisher
ELECTROCHEMICAL SOC INC
Citation
ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.2, pp.H36 - H38
Indexed
SCIE
SCOPUS
Journal Title
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume
11
Number
2
Start Page
H36
End Page
H38
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/125521
DOI
10.1149/1.2819536
ISSN
1099-0062
Abstract
We have investigated the Ag(1 nm)/indium tin oxide (ITO) (200 nm) contacts by scanning transmission electron microscopy (STEM), Auger electron spectroscopy (AES), and X-ray photoemission spectroscopy (XPS) to understand its ohmic mechanism. The Ag/ITO contacts exhibit ohmic behaviors, when annealed at 400-600 degrees C. The effective Schottky barrier heights depend on the annealing temperatures. STEM and AES results reveal the formation of Ag nanodots (5-35 nm across) and Ga-Ag solid solution. Based on the STEM, AES, and XPS results, the ohmic contact formation is described in terms of the formation of the Ga-Ag solid solution and the inhomogeneous interfaces with nanodots. (c) 2007 The Electrochemical Society.
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College of Engineering (Department of Materials Science and Engineering)
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