Possible ohmic mechanisms of Ag/indium tin oxide p-type contacts for high-brightness GaN-based light emitting diodes
- Authors
- Song, June-O; Hong, Hyun-Gi; Jeon, Joon-Woo; Sohn, Jung-Inn; Jang, Ja-Soon; Seong, Tae-Yeon
- Issue Date
- 2008
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.2, pp.H36 - H38
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTROCHEMICAL AND SOLID STATE LETTERS
- Volume
- 11
- Number
- 2
- Start Page
- H36
- End Page
- H38
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/125521
- DOI
- 10.1149/1.2819536
- ISSN
- 1099-0062
- Abstract
- We have investigated the Ag(1 nm)/indium tin oxide (ITO) (200 nm) contacts by scanning transmission electron microscopy (STEM), Auger electron spectroscopy (AES), and X-ray photoemission spectroscopy (XPS) to understand its ohmic mechanism. The Ag/ITO contacts exhibit ohmic behaviors, when annealed at 400-600 degrees C. The effective Schottky barrier heights depend on the annealing temperatures. STEM and AES results reveal the formation of Ag nanodots (5-35 nm across) and Ga-Ag solid solution. Based on the STEM, AES, and XPS results, the ohmic contact formation is described in terms of the formation of the Ga-Ag solid solution and the inhomogeneous interfaces with nanodots. (c) 2007 The Electrochemical Society.
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Collections - College of Engineering > Department of Materials Science and Engineering > 1. Journal Articles
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