Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS2 Transistor
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Kookjin | - |
dc.contributor.author | Choi, Junhee | - |
dc.contributor.author | Kaczer, Ben | - |
dc.contributor.author | Grill, Alexander | - |
dc.contributor.author | Lee, Jae Woo | - |
dc.contributor.author | Van Beek, Simon | - |
dc.contributor.author | Bury, Erik | - |
dc.contributor.author | Diaz-Fortuny, Javier | - |
dc.contributor.author | Chasin, Adrian | - |
dc.contributor.author | Lee, Jaewoo | - |
dc.contributor.author | Chun, Jungu | - |
dc.contributor.author | Shin, Dong Hoon | - |
dc.contributor.author | Na, Junhong | - |
dc.contributor.author | Cho, Hyeran | - |
dc.contributor.author | Lee, Sang Wook | - |
dc.contributor.author | Kim, Gyu-Tae | - |
dc.date.accessioned | 2021-11-19T01:40:53Z | - |
dc.date.available | 2021-11-19T01:40:53Z | - |
dc.date.created | 2021-08-30 | - |
dc.date.issued | 2021-06 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/127941 | - |
dc.description.abstract | In this study, high-performance few-layered ReS2 field-effect transistors (FETs), fabricated with hexagonal boron nitride (h-BN) as top/bottom dual gate dielectrics, are presented. The performance of h-BN dual gated ReS2 FET having a trade-off of performance parameters is optimized using a compact model from analytical choice maps, which consists of three regions with different electrical characteristics. The bottom h-BN dielectric has almost no defects and provides a physical distance between the traps in the SiO2 and the carriers in the ReS2 channel. Using a compact analyzing model and structural advantages, an excellent and optimized performance is introduced consisting of h-BN dual-gated ReS2 with a high mobility of 46.1 cm(2) V-1 s(-1), a high current on/off ratio of approximate to 10(6), a subthreshold swing of 2.7 V dec(-1), and a low effective interface trap density (N-t,N-eff) of 7.85 x 10(10) cm(-2) eV(-1) at a small operating voltage (<3 V). These phenomena are demonstrated through not only a fundamental current-voltage analysis, but also technology computer aided design simulations, time-dependent current, and low-frequency noise analysis. In addition, a simple method is introduced to extract the interlayer resistance of ReS2 channel through Y-function method as a function of constant top gate bias. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS2 Transistor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Lee, Jaewoo | - |
dc.contributor.affiliatedAuthor | Kim, Gyu-Tae | - |
dc.identifier.doi | 10.1002/adfm.202100625 | - |
dc.identifier.scopusid | 2-s2.0-85103975333 | - |
dc.identifier.wosid | 000635455800001 | - |
dc.identifier.bibliographicCitation | ADVANCED FUNCTIONAL MATERIALS, v.31, no.23 | - |
dc.relation.isPartOf | ADVANCED FUNCTIONAL MATERIALS | - |
dc.citation.title | ADVANCED FUNCTIONAL MATERIALS | - |
dc.citation.volume | 31 | - |
dc.citation.number | 23 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | LOW-FREQUENCY NOISE | - |
dc.subject.keywordPlus | MONOLAYER | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | ELECTRON | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | LAYERS | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | HFO2 | - |
dc.subject.keywordAuthor | defects | - |
dc.subject.keywordAuthor | dual& | - |
dc.subject.keywordAuthor | #8208 | - |
dc.subject.keywordAuthor | gate ReS2 | - |
dc.subject.keywordAuthor | field& | - |
dc.subject.keywordAuthor | #8208 | - |
dc.subject.keywordAuthor | effect transistors | - |
dc.subject.keywordAuthor | hexagonal boron nitride | - |
dc.subject.keywordAuthor | 2D materials | - |
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