Modeling and Understanding the Compact Performance of h-BN Dual-Gated ReS2 Transistor
- Authors
- Lee, Kookjin; Choi, Junhee; Kaczer, Ben; Grill, Alexander; Lee, Jae Woo; Van Beek, Simon; Bury, Erik; Diaz-Fortuny, Javier; Chasin, Adrian; Lee, Jaewoo; Chun, Jungu; Shin, Dong Hoon; Na, Junhong; Cho, Hyeran; Lee, Sang Wook; Kim, Gyu-Tae
- Issue Date
- 6월-2021
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- defects; dual& #8208; gate ReS2; field& #8208; effect transistors; hexagonal boron nitride; 2D materials
- Citation
- ADVANCED FUNCTIONAL MATERIALS, v.31, no.23
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED FUNCTIONAL MATERIALS
- Volume
- 31
- Number
- 23
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/127941
- DOI
- 10.1002/adfm.202100625
- ISSN
- 1616-301X
- Abstract
- In this study, high-performance few-layered ReS2 field-effect transistors (FETs), fabricated with hexagonal boron nitride (h-BN) as top/bottom dual gate dielectrics, are presented. The performance of h-BN dual gated ReS2 FET having a trade-off of performance parameters is optimized using a compact model from analytical choice maps, which consists of three regions with different electrical characteristics. The bottom h-BN dielectric has almost no defects and provides a physical distance between the traps in the SiO2 and the carriers in the ReS2 channel. Using a compact analyzing model and structural advantages, an excellent and optimized performance is introduced consisting of h-BN dual-gated ReS2 with a high mobility of 46.1 cm(2) V-1 s(-1), a high current on/off ratio of approximate to 10(6), a subthreshold swing of 2.7 V dec(-1), and a low effective interface trap density (N-t,N-eff) of 7.85 x 10(10) cm(-2) eV(-1) at a small operating voltage (<3 V). These phenomena are demonstrated through not only a fundamental current-voltage analysis, but also technology computer aided design simulations, time-dependent current, and low-frequency noise analysis. In addition, a simple method is introduced to extract the interlayer resistance of ReS2 channel through Y-function method as a function of constant top gate bias.
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Collections - Graduate School > Department of Electronics and Information Engineering > 1. Journal Articles
- College of Engineering > School of Electrical Engineering > 1. Journal Articles
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