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Hysteresis Modulation on Van der Waals-Based Ferroelectric Field-Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks

Authors
Jeon, HyeokKim, Seung-GeunPark, JuneKim, Seung-HwanPark, EuyjinKim, JiyoungYu, Hyun-Yong
Issue Date
12월-2020
Publisher
WILEY-V C H VERLAG GMBH
Keywords
2D& #8208; based ferroelectric field effect transistors; HfO2& #8208; based ferroelectric materials; optic& #8208; neural synapses; passivation effects; 2D materials
Citation
SMALL, v.16, no.49
Indexed
SCIE
SCOPUS
Journal Title
SMALL
Volume
16
Number
49
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/130329
DOI
10.1002/smll.202004371
ISSN
1613-6810
Abstract
2D semiconductor-based ferroelectric field effect transistors (FeFETs) have been considered as a promising artificial synaptic device for implementation of neuromorphic computing systems. However, an inevitable problem, interface traps at the 2D semiconductor/ferroelectric oxide interface, suppresses ferroelectric characteristics, and causes a critical degradation on the performance of 2D-based FeFETs. Here, hysteresis modulation method using self-assembly monolayer (SAM) material for interface trap passivation on 2D-based FeFET is presented. Through effectively passivation of interface traps by SAM layer, the hysteresis of the proposed device changes from interface traps-dependent to polarization-dependent direction. The reduction of interface trap density is clearly confirmed through the result of calculation using the subthreshold swing of the device. Furthermore, excellent optic-neural synaptic characteristics are successfully implemeted, including linear and symmetric potentiation and depression, and multilevel conductance. This work identifies the potential of passivation effect for 2D-based FeFETs to accelerate the development of neuromorphic computing systems.
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공과대학 (전기전자공학부)
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