Hysteresis Modulation on Van der Waals-Based Ferroelectric Field-Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks
- Authors
- Jeon, Hyeok; Kim, Seung-Geun; Park, June; Kim, Seung-Hwan; Park, Euyjin; Kim, Jiyoung; Yu, Hyun-Yong
- Issue Date
- 12월-2020
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- 2D& #8208; based ferroelectric field effect transistors; HfO2& #8208; based ferroelectric materials; optic& #8208; neural synapses; passivation effects; 2D materials
- Citation
- SMALL, v.16, no.49
- Indexed
- SCIE
SCOPUS
- Journal Title
- SMALL
- Volume
- 16
- Number
- 49
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/130329
- DOI
- 10.1002/smll.202004371
- ISSN
- 1613-6810
- Abstract
- 2D semiconductor-based ferroelectric field effect transistors (FeFETs) have been considered as a promising artificial synaptic device for implementation of neuromorphic computing systems. However, an inevitable problem, interface traps at the 2D semiconductor/ferroelectric oxide interface, suppresses ferroelectric characteristics, and causes a critical degradation on the performance of 2D-based FeFETs. Here, hysteresis modulation method using self-assembly monolayer (SAM) material for interface trap passivation on 2D-based FeFET is presented. Through effectively passivation of interface traps by SAM layer, the hysteresis of the proposed device changes from interface traps-dependent to polarization-dependent direction. The reduction of interface trap density is clearly confirmed through the result of calculation using the subthreshold swing of the device. Furthermore, excellent optic-neural synaptic characteristics are successfully implemeted, including linear and symmetric potentiation and depression, and multilevel conductance. This work identifies the potential of passivation effect for 2D-based FeFETs to accelerate the development of neuromorphic computing systems.
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