Quasi-Nonvolatile Silicon Memory Device

Abstract

Memory hierarchy among conventional memory technologies is one of the main bottlenecks in modern computer systems; alternative memory technologies are thus necessary for quasi-nonvolatile memory applications. Herein, a fully complementary metal-oxide-semiconductor-compatible quasi-nonvolatile memory composed of p(+)-n-p-n(+) silicon on a silicon-on-insulator substrate is presented. The quasi-nonvolatile silicon memory device demonstrates high-speed write capability (<= 100 ns), long retention time (100 s), and nondestructive read capability (1000 s), with high sensing current margin (approximate to 10(9)) and reliable endurance (>= 10(9)) at low voltages (<= 1 V). Disturb immunity for memory array operations is also observed. This study demonstrates that the proposed quasi-nonvolatile silicon memory device is a promising candidate that can revolutionize the entire memory hierarchy.