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Post dry etching treatment of nanopillar GaN/InGaN multi-quantum-wells (vol 868, 159211, 2021)

Authors
Polyakov, A. Y.Alexanyan, L. A.Skorikov, M. L.Chernykh, A. V.Shchemerov, I. V.Murashev, V. N.Kim, Tae-HwanLee, In-HwanPearton, S. J.
Issue Date
25-12월-2021
Publisher
ELSEVIER SCIENCE SA
Citation
JOURNAL OF ALLOYS AND COMPOUNDS, v.888
Indexed
SCIE
SCOPUS
Journal Title
JOURNAL OF ALLOYS AND COMPOUNDS
Volume
888
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/135383
DOI
10.1016/j.jallcom.2021.161947
ISSN
0925-8388
Abstract
The authors regret author In-Hwan Lee's affiliation was incorrectly shown in the original version. The authors would like to apologise for any inconvenience caused. https://doi.org/10.1016/j.jallcom.2021.159211. © 2021 Elsevier B.V.
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Lee, In Hwan
공과대학 (신소재공학부)
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