Remarkable piezoelectric performance and good thermal stability of < 001 > -textured 0.96(K0.5Na0.5)(Nb1-ySby)O-3-0.04SrZrO(3) lead-free piezoelectric ceramics
- Authors
- Kim, Dae-Su; Eum, Jae-Min; Go, Su-Hwan; Shin, Ho-Sung; Kim, Hero; Chae, Seok-June; Kim, Sun-Woo; Kim, Eun-Ji; Woo, Jong-Un; Nahm, Sahn
- Issue Date
- 15-11월-2021
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Lead free; Piezoelectric ceramic; Reactive templated grain growth; Texturing; Thick film
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.882
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 882
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/135719
- DOI
- 10.1016/j.jallcom.2021.160662
- ISSN
- 0925-8388
- Abstract
- A 0.96(K0.5Na0.5)(Nb1-ySby)O-3-0.04SrZrO(3) [KN(N1-ySy)-SZ] thick films with 0.045 <= y <= 0.08 were textured along the [001] direction using NaNbO3 (NN) templates. A 3.0 mol% NN seed-added KN(N1-ySy)-SZ thick film with y = 0.055 exhibited a large Lotgering factor of 97% and d(33) value of 502 pC/N. This thick film had an orthorhombic-pseudocubic polymorphic phase transition structure. Rietveld analysis revealed that the pseudocubic structure was similar to the R3m rhombohedral structure. The proportion of the pseudocubic phase in this thick film was significantly lower than that of the orthorhombic phase. The proportion of the pseudocubic phase increased with increasing Sb2O5. A 3.0 mol% NN seed-added KN(N0.935S0.065)-SZ thick film (y = 0.065) exhibited a large d(33) value of 620 pC/N because it had similar proportions of orthorhombic and pseudocubic structure. The large d(33) value (>= 580 pC/N) was maintained up to 110 degrees C, indicating that this thick film exhibits excellent thermal stability. Furthermore, the thick films with 0.045 <= y <= 0.055 are expected to be good candidates for piezoelectric energy harvesters (PEHs) because they exhibited large d(33) x g(33) values (>= 19.3 pm(2)/N), which represent the figure of merit of a PEH. (C) 2021 Elsevier B.V. All rights reserved.
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