Electrical characteristics of flexible amorphous indium-tin-gallium-zinc oxide thin-film transistors under repetitive mechanical stress
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Hosang | - |
dc.contributor.author | Cho, Kyoungah | - |
dc.contributor.author | Kong, Heesung | - |
dc.contributor.author | Lee, Seungjun | - |
dc.contributor.author | Lim, Junhyung | - |
dc.contributor.author | Kim, Sangsig | - |
dc.date.accessioned | 2022-02-21T16:42:29Z | - |
dc.date.available | 2022-02-21T16:42:29Z | - |
dc.date.created | 2022-02-07 | - |
dc.date.issued | 2021-09-01 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/136402 | - |
dc.description.abstract | In this study, we investigated the effect of repetitive mechanical stress on the electrical characteristics of amorphous indium-tin-gallium-zinc oxide (a-ITGZO) thin-film transistors (TFTs). The degradation of the electrical characteristics of an a-ITGZO TFT with a curvature radius of 2 mm is minimal even after the TFT undergoes bending 10(5) times. Our technology computer-aided design simulation reveals that the electrical characteristics degraded by the repeated bending cycles are due to the increase in the acceptor-like Gaussian states (N (GA)) related with the generation of oxygen interstitial defects. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.subject | RECOVERY | - |
dc.title | Electrical characteristics of flexible amorphous indium-tin-gallium-zinc oxide thin-film transistors under repetitive mechanical stress | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Sangsig | - |
dc.identifier.doi | 10.35848/1347-4065/ac1c8d | - |
dc.identifier.scopusid | 2-s2.0-85114554585 | - |
dc.identifier.wosid | 000688260000001 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.60, no.9 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 60 | - |
dc.citation.number | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | RECOVERY | - |
dc.subject.keywordAuthor | CPI substrates | - |
dc.subject.keywordAuthor | TCAD simulation | - |
dc.subject.keywordAuthor | a-ITGZO TFTs | - |
dc.subject.keywordAuthor | repetitive mechanical stress | - |
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