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Electrical characteristics of flexible amorphous indium-tin-gallium-zinc oxide thin-film transistors under repetitive mechanical stress
- Issue Date
- 1-9월-2021
- Publisher
- IOP PUBLISHING LTD
- Keywords
- CPI substrates; TCAD simulation; a-ITGZO TFTs; repetitive mechanical stress
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.60, no.9
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 60
- Number
- 9
- ISSN
- 0021-4922
- Abstract
- In this study, we investigated the effect of repetitive mechanical stress on the electrical characteristics of amorphous indium-tin-gallium-zinc oxide (a-ITGZO) thin-film transistors (TFTs). The degradation of the electrical characteristics of an a-ITGZO TFT with a curvature radius of 2 mm is minimal even after the TFT undergoes bending 10(5) times. Our technology computer-aided design simulation reveals that the electrical characteristics degraded by the repeated bending cycles are due to the increase in the acceptor-like Gaussian states (N (GA)) related with the generation of oxygen interstitial defects.
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