Stoichiometric silicon nitride thin films for gas barrier, with applications to flexible and stretchable OLED encapsulation
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, SeungMin | - |
dc.contributor.author | Yoon, Ho Won | - |
dc.contributor.author | Jang, YunSung | - |
dc.contributor.author | Hong, MunPyo | - |
dc.date.accessioned | 2022-03-01T16:42:20Z | - |
dc.date.available | 2022-03-01T16:42:20Z | - |
dc.date.created | 2022-01-20 | - |
dc.date.issued | 2021-05-03 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/137394 | - |
dc.description.abstract | This study reveals that the stoichiometricity of silicon nitride thin films (SiNx-TFs) significantly governs the packing density and water vapor transmission rate (WVTR), and it can be controlled by chemical reactions accompanied by the removal of oxygen impurities with a nitrogen neutral beam (N-NB). Here, oxygen contents of SiNx-TFs are reduced through the formation of volatile NOx, and their amount is dominated by the energy of the N-NB reflected from a negatively biased reflector (0 to -60V). The single-layered stoichiometric SiNx-TFs with a thickness of 100nm provides the WVTR of 6.2x10(-6) g/(m(2)day), with a density and composition ratio of N/Si stoichiometry at 3.13g/cm(3) and 1.33, respectively. This optimized SiNx-TF encapsulated top-emission organic light-emitting diode has reliability under harsh condition (85 degrees C and 85% relative humidity) for 830 h or more. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | AIP Publishing | - |
dc.subject | OXIDE LAYERS | - |
dc.subject | PLASMA | - |
dc.subject | TRANSPARENT | - |
dc.subject | PERFORMANCE | - |
dc.subject | N-2 | - |
dc.subject | MICROSTRUCTURE | - |
dc.subject | DISSOCIATION | - |
dc.subject | DENSITY | - |
dc.title | Stoichiometric silicon nitride thin films for gas barrier, with applications to flexible and stretchable OLED encapsulation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, MunPyo | - |
dc.identifier.doi | 10.1063/5.0050836 | - |
dc.identifier.scopusid | 2-s2.0-85105317865 | - |
dc.identifier.wosid | 000698625800012 | - |
dc.identifier.bibliographicCitation | APPLIED PHYSICS LETTERS, v.118, no.18 | - |
dc.relation.isPartOf | APPLIED PHYSICS LETTERS | - |
dc.citation.title | APPLIED PHYSICS LETTERS | - |
dc.citation.volume | 118 | - |
dc.citation.number | 18 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | OXIDE LAYERS | - |
dc.subject.keywordPlus | PLASMA | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | N-2 | - |
dc.subject.keywordPlus | MICROSTRUCTURE | - |
dc.subject.keywordPlus | DISSOCIATION | - |
dc.subject.keywordPlus | DENSITY | - |
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