Stoichiometric silicon nitride thin films for gas barrier, with applications to flexible and stretchable OLED encapsulation
- Authors
- Shin, SeungMin; Yoon, Ho Won; Jang, YunSung; Hong, MunPyo
- Issue Date
- 3-5월-2021
- Publisher
- AIP Publishing
- Citation
- APPLIED PHYSICS LETTERS, v.118, no.18
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 118
- Number
- 18
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/137394
- DOI
- 10.1063/5.0050836
- ISSN
- 0003-6951
- Abstract
- This study reveals that the stoichiometricity of silicon nitride thin films (SiNx-TFs) significantly governs the packing density and water vapor transmission rate (WVTR), and it can be controlled by chemical reactions accompanied by the removal of oxygen impurities with a nitrogen neutral beam (N-NB). Here, oxygen contents of SiNx-TFs are reduced through the formation of volatile NOx, and their amount is dominated by the energy of the N-NB reflected from a negatively biased reflector (0 to -60V). The single-layered stoichiometric SiNx-TFs with a thickness of 100nm provides the WVTR of 6.2x10(-6) g/(m(2)day), with a density and composition ratio of N/Si stoichiometry at 3.13g/cm(3) and 1.33, respectively. This optimized SiNx-TF encapsulated top-emission organic light-emitting diode has reliability under harsh condition (85 degrees C and 85% relative humidity) for 830 h or more.
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Collections - Graduate School > Department of Applied Physics > 1. Journal Articles
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