A CMOS 300-GHz Injection-Locked Frequency Tripler With a Tri-Layer Dual Coupled Line for Improved Locking Range
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Sooyeon | - |
dc.contributor.author | Yoon, Daekeun | - |
dc.contributor.author | Kim, Jungsoo | - |
dc.contributor.author | Yoo, Junghwan | - |
dc.contributor.author | Song, Kiryong | - |
dc.contributor.author | Rieh, Jae-Sung | - |
dc.date.accessioned | 2022-03-02T14:42:38Z | - |
dc.date.available | 2022-03-02T14:42:38Z | - |
dc.date.created | 2022-03-02 | - |
dc.date.issued | 2022-02 | - |
dc.identifier.issn | 1549-7747 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/137514 | - |
dc.description.abstract | A triple-push sub-harmonic injection-locked ring tripler is presented in this brief. The circuit converts a 100-GHz injection signal to an output signal of around 300 GHz. The circuit employs a tri-layer dual coupled line, which is composed of three layers of metal stack. The signal injection through the tri-layer dual coupled line structure disturbs the symmetry in the injection-locked ring tripler, leading to a locking range enhancement. The circuit, fabricated in a 65-nm CMOS process, achieved a locking range of up to 24 GHz with a 3-dBm injection power. A measured output power larger than -18 dBm was obtained at the free-running frequency of 302 GHz. The measured phase noise was -105 dBc/Hz at 1-MHz offset. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | OSCILLATOR | - |
dc.title | A CMOS 300-GHz Injection-Locked Frequency Tripler With a Tri-Layer Dual Coupled Line for Improved Locking Range | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Rieh, Jae-Sung | - |
dc.identifier.doi | 10.1109/TCSII.2021.3103736 | - |
dc.identifier.scopusid | 2-s2.0-85124310058 | - |
dc.identifier.wosid | 000748372000014 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, v.69, no.2, pp.309 - 313 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | - |
dc.citation.title | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | - |
dc.citation.volume | 69 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 309 | - |
dc.citation.endPage | 313 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | OSCILLATOR | - |
dc.subject.keywordAuthor | Oscillators | - |
dc.subject.keywordAuthor | Metals | - |
dc.subject.keywordAuthor | Harmonic analysis | - |
dc.subject.keywordAuthor | Couplings | - |
dc.subject.keywordAuthor | Ring oscillators | - |
dc.subject.keywordAuthor | Power generation | - |
dc.subject.keywordAuthor | Impedance | - |
dc.subject.keywordAuthor | Sub-harmonic injection-locked oscillators | - |
dc.subject.keywordAuthor | CMOS | - |
dc.subject.keywordAuthor | sub-millimeter wave | - |
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