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A CMOS 300-GHz Injection-Locked Frequency Tripler With a Tri-Layer Dual Coupled Line for Improved Locking Range

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dc.contributor.authorKim, Sooyeon-
dc.contributor.authorYoon, Daekeun-
dc.contributor.authorKim, Jungsoo-
dc.contributor.authorYoo, Junghwan-
dc.contributor.authorSong, Kiryong-
dc.contributor.authorRieh, Jae-Sung-
dc.date.accessioned2022-03-02T14:42:38Z-
dc.date.available2022-03-02T14:42:38Z-
dc.date.created2022-03-02-
dc.date.issued2022-02-
dc.identifier.issn1549-7747-
dc.identifier.urihttps://scholar.korea.ac.kr/handle/2021.sw.korea/137514-
dc.description.abstractA triple-push sub-harmonic injection-locked ring tripler is presented in this brief. The circuit converts a 100-GHz injection signal to an output signal of around 300 GHz. The circuit employs a tri-layer dual coupled line, which is composed of three layers of metal stack. The signal injection through the tri-layer dual coupled line structure disturbs the symmetry in the injection-locked ring tripler, leading to a locking range enhancement. The circuit, fabricated in a 65-nm CMOS process, achieved a locking range of up to 24 GHz with a 3-dBm injection power. A measured output power larger than -18 dBm was obtained at the free-running frequency of 302 GHz. The measured phase noise was -105 dBc/Hz at 1-MHz offset.-
dc.languageEnglish-
dc.language.isoen-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectOSCILLATOR-
dc.titleA CMOS 300-GHz Injection-Locked Frequency Tripler With a Tri-Layer Dual Coupled Line for Improved Locking Range-
dc.typeArticle-
dc.contributor.affiliatedAuthorRieh, Jae-Sung-
dc.identifier.doi10.1109/TCSII.2021.3103736-
dc.identifier.scopusid2-s2.0-85124310058-
dc.identifier.wosid000748372000014-
dc.identifier.bibliographicCitationIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, v.69, no.2, pp.309 - 313-
dc.relation.isPartOfIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS-
dc.citation.titleIEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS-
dc.citation.volume69-
dc.citation.number2-
dc.citation.startPage309-
dc.citation.endPage313-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusOSCILLATOR-
dc.subject.keywordAuthorOscillators-
dc.subject.keywordAuthorMetals-
dc.subject.keywordAuthorHarmonic analysis-
dc.subject.keywordAuthorCouplings-
dc.subject.keywordAuthorRing oscillators-
dc.subject.keywordAuthorPower generation-
dc.subject.keywordAuthorImpedance-
dc.subject.keywordAuthorSub-harmonic injection-locked oscillators-
dc.subject.keywordAuthorCMOS-
dc.subject.keywordAuthorsub-millimeter wave-
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