A CMOS 300-GHz Injection-Locked Frequency Tripler With a Tri-Layer Dual Coupled Line for Improved Locking Range
- Authors
- Kim, Sooyeon; Yoon, Daekeun; Kim, Jungsoo; Yoo, Junghwan; Song, Kiryong; Rieh, Jae-Sung
- Issue Date
- 2월-2022
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Oscillators; Metals; Harmonic analysis; Couplings; Ring oscillators; Power generation; Impedance; Sub-harmonic injection-locked oscillators; CMOS; sub-millimeter wave
- Citation
- IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, v.69, no.2, pp.309 - 313
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
- Volume
- 69
- Number
- 2
- Start Page
- 309
- End Page
- 313
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/137514
- DOI
- 10.1109/TCSII.2021.3103736
- ISSN
- 1549-7747
- Abstract
- A triple-push sub-harmonic injection-locked ring tripler is presented in this brief. The circuit converts a 100-GHz injection signal to an output signal of around 300 GHz. The circuit employs a tri-layer dual coupled line, which is composed of three layers of metal stack. The signal injection through the tri-layer dual coupled line structure disturbs the symmetry in the injection-locked ring tripler, leading to a locking range enhancement. The circuit, fabricated in a 65-nm CMOS process, achieved a locking range of up to 24 GHz with a 3-dBm injection power. A measured output power larger than -18 dBm was obtained at the free-running frequency of 302 GHz. The measured phase noise was -105 dBc/Hz at 1-MHz offset.
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