Electrical Stability of p-Channel Feedback Field-Effect Transistors Under Bias Stresses

Abstract

In this study, we examined electrical stability of the p-channel feedback field-effect transistors (FBFETs) under negative bias stress (NBS) and positive bias stress (PBS). The intact FBFETs have a subthreshold swing (SS) of 0.12 mV/dec, an on-current of similar to 10(-4) A, and a threshold voltage (V-TH) of -0.76V. There is a negligible change in the on-current and SS when the FBFETs are stressed by a gate-bias voltage corresponding to an electric field of 5.4 MV/cm across the gate oxide. On the other hand, as the duration of the stress increases to 1000 s, the VTH shifts to -0.89 V and -0.67 V for NBS and PBS, respectively. The V-TH was recovered to over 83% at a recovery bias voltage of +/- 5 V. The electrical stabilities of FBFETs under NBS and PBS are discussed in this study.