Electrical Stability of p-Channel Feedback Field-Effect Transistors Under Bias Stresses
- Authors
- Son, Jaemin; Cho, Kyoungah; Kim, Sangsig
- Issue Date
- 2021
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Field-effect transistor; positive feedback loop; reliability; bias stress; recovery
- Citation
- IEEE ACCESS, v.9, pp.119402 - 119405
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ACCESS
- Volume
- 9
- Start Page
- 119402
- End Page
- 119405
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/138657
- DOI
- 10.1109/ACCESS.2021.3108232
- ISSN
- 2169-3536
- Abstract
- In this study, we examined electrical stability of the p-channel feedback field-effect transistors (FBFETs) under negative bias stress (NBS) and positive bias stress (PBS). The intact FBFETs have a subthreshold swing (SS) of 0.12 mV/dec, an on-current of similar to 10(-4) A, and a threshold voltage (V-TH) of -0.76V. There is a negligible change in the on-current and SS when the FBFETs are stressed by a gate-bias voltage corresponding to an electric field of 5.4 MV/cm across the gate oxide. On the other hand, as the duration of the stress increases to 1000 s, the VTH shifts to -0.89 V and -0.67 V for NBS and PBS, respectively. The V-TH was recovered to over 83% at a recovery bias voltage of +/- 5 V. The electrical stabilities of FBFETs under NBS and PBS are discussed in this study.
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Collections - College of Engineering > School of Electrical Engineering > 1. Journal Articles
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