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Bias dependent physics-based model of low-frequency noise for nanowire type gate-all-around MOSFETs
- Authors
- Yi, B.; Yang, G.S.; Barraud, S.; Bervard, L.; Lee, J.W.; Yang, J.-W.
- Issue Date
- 3월-2022
- Publisher
- Elsevier Ltd
- Keywords
- Compact model; Gate-all-around MOSFETs; Low-frequency noise; Nanowire MOSFETs
- Citation
- Solid-State Electronics, v.189
- Indexed
- SCIE
SCOPUS
- Journal Title
- Solid-State Electronics
- Volume
- 189
- ISSN
- 0038-1101
- Abstract
- In this study, the bias dependence of low-frequency noise (LFN) in nanowire type gate-all-around (GAA) MOSFETs was physically modeled. In the model, the inversion carrier density distribution was considered based on the potential in the channel that changes according to the bias. The developed model was verified with measurement data of the fabricated device. The model could help circuit designers to optimize noise performance in analog/RF applications when designing integrated circuits using nanowire-type GAA MOSFETs. © 2021 Elsevier Ltd
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