Dependence of latch-up and threshold voltages on channel length in single-gated feedback field-effect transistor
- Authors
- Woo, Sola; Kim, Sangsig
- Issue Date
- 1-8월-2022
- Publisher
- IOP Publishing Ltd
- Keywords
- feedback field-effect transistors; latch-up mechanism; latch-up voltage; threshold voltage; current gain; channel length variation
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.37, no.8
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 37
- Number
- 8
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/142883
- DOI
- 10.1088/1361-6641/ac7b3e
- ISSN
- 0268-1242
- Abstract
- This study demonstrates an optimal design method for the channel length in a p (+)-i-p-n (+) structure of feedback field-effect transistors (FBFETs) for next-generation memory devices. We demonstrate the dependence of latch-up and threshold voltages on the channel length in single-gated FBFETs with silicon channels consisting of gated and non-gated regions. The operation principle of the latch-up phenomena related to the channel length using an equivalent circuit in an FBFET has been described. The abrupt increase in the drain current of the single-gated FBFETs at the latch-up (threshold) voltage in the sweep of the drain (gate) voltage was analyzed with current gains in an equivalent circuit. The current gain depends on the gated and non-gated channel lengths; thereby, the latch-up and threshold voltages too depend on the gated and non-gated channel lengths. The dependences of the latch-up and threshold voltages on the non-gated channel length were found to be 3.62 times and 1.68 times higher than that on the gated channel length, respectively.
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