Understanding of carriers' kinetic energy in steep-slope P plus N plus P plus N plus feedback field effect transistor
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sung, Juho | - |
dc.contributor.author | Shin, Changhwan | - |
dc.date.accessioned | 2022-09-23T06:41:11Z | - |
dc.date.available | 2022-09-23T06:41:11Z | - |
dc.date.created | 2022-09-23 | - |
dc.date.issued | 2022-10-01 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/143721 | - |
dc.description.abstract | A feedback field-effect transistor takes advantage of the charges accumulated in its potential well and the restriction of carrier flow by its internal potential barrier to achieve superior electrical properties such as a subthreshold swing, threshold voltage, transconductance, and on/off current ratio. However, the device must deal with the modulation of non-uniformity under forward/reverse bias and with completely losing carrier flow control during reverse bias below a certain channel length. In this work, we address these significant issues by focusing on the width of the source/drain and demonstrate the operation of positive feedback in n-type metal oxide semiconductor field-effect transistor (nMOSFET) using only one additional step, resulting in a superior subthreshold swing (similar to 3 mV/decade at 300 K), a low threshold voltage (similar to 0.26 V), hysteresis window (0.018 V), and clear saturation region. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | IOP Publishing Ltd | - |
dc.subject | COMPACT MODEL | - |
dc.subject | DEVICE | - |
dc.title | Understanding of carriers' kinetic energy in steep-slope P plus N plus P plus N plus feedback field effect transistor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Shin, Changhwan | - |
dc.identifier.doi | 10.1088/1361-6641/ac8b2b | - |
dc.identifier.scopusid | 2-s2.0-85138475911 | - |
dc.identifier.wosid | 000850681100001 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.37, no.10 | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 37 | - |
dc.citation.number | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | COMPACT MODEL | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordAuthor | ADFET | - |
dc.subject.keywordAuthor | FBFET | - |
dc.subject.keywordAuthor | Hysteresis-free | - |
dc.subject.keywordAuthor | PF device | - |
dc.subject.keywordAuthor | Z(2)-FET | - |
dc.subject.keywordAuthor | positive feedback | - |
dc.subject.keywordAuthor | steep switching | - |
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