Understanding of carriers' kinetic energy in steep-slope P plus N plus P plus N plus feedback field effect transistor
- Authors
- Sung, Juho; Shin, Changhwan
- Issue Date
- 1-10월-2022
- Publisher
- IOP Publishing Ltd
- Keywords
- ADFET; FBFET; Hysteresis-free; PF device; Z(2)-FET; positive feedback; steep switching
- Citation
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.37, no.10
- Indexed
- SCIE
SCOPUS
- Journal Title
- SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Volume
- 37
- Number
- 10
- URI
- https://scholar.korea.ac.kr/handle/2021.sw.korea/143721
- DOI
- 10.1088/1361-6641/ac8b2b
- ISSN
- 0268-1242
- Abstract
- A feedback field-effect transistor takes advantage of the charges accumulated in its potential well and the restriction of carrier flow by its internal potential barrier to achieve superior electrical properties such as a subthreshold swing, threshold voltage, transconductance, and on/off current ratio. However, the device must deal with the modulation of non-uniformity under forward/reverse bias and with completely losing carrier flow control during reverse bias below a certain channel length. In this work, we address these significant issues by focusing on the width of the source/drain and demonstrate the operation of positive feedback in n-type metal oxide semiconductor field-effect transistor (nMOSFET) using only one additional step, resulting in a superior subthreshold swing (similar to 3 mV/decade at 300 K), a low threshold voltage (similar to 0.26 V), hysteresis window (0.018 V), and clear saturation region.
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