Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAM
DC Field | Value | Language |
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dc.contributor.author | Sun, Minjae | - |
dc.contributor.author | Baac, Hyoung Won | - |
dc.contributor.author | Shin, Changhwan | - |
dc.date.accessioned | 2022-10-06T07:41:26Z | - |
dc.date.available | 2022-10-06T07:41:26Z | - |
dc.date.created | 2022-10-06 | - |
dc.date.issued | 2022-09 | - |
dc.identifier.issn | 2072-666X | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/144090 | - |
dc.description.abstract | As the physical dimensions of cell transistors in dynamic random-access memory (DRAM) have been aggressively scaled down, buried-channel-array transistors (BCATs) have been adopted in industry to suppress short channel effects and to achieve a better performance. In very aggressively scaled-down BCATs, the impact of structural variations on the electrical characteristics can be more significant than expected. Using a technology computer-aided design (TCAD) tool, the structural variations in BCAT (e.g., the aspect ratio of the BCAT recess-to-gate length, BCAT depth, junction depth, fin width, and fin fillet radius) were simulated to enable a quantitative understanding of its impact on the device characteristics, such as the input/output characteristics, threshold voltage, subthreshold swing, on-/off-current ratio, and drain-induced barrier lowering. This work paves the road for the design of a variation-robust BCAT. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | MDPI | - |
dc.subject | ELECTRIC-FIELD | - |
dc.subject | MODEL | - |
dc.title | Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAM | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Shin, Changhwan | - |
dc.identifier.doi | 10.3390/mi13091476 | - |
dc.identifier.scopusid | 2-s2.0-85138694317 | - |
dc.identifier.wosid | 000857767400001 | - |
dc.identifier.bibliographicCitation | MICROMACHINES, v.13, no.9 | - |
dc.relation.isPartOf | MICROMACHINES | - |
dc.citation.title | MICROMACHINES | - |
dc.citation.volume | 13 | - |
dc.citation.number | 9 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Instruments & Instrumentation | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Analytical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Instruments & Instrumentation | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ELECTRIC-FIELD | - |
dc.subject.keywordPlus | MODEL | - |
dc.subject.keywordAuthor | buried channel array transistor | - |
dc.subject.keywordAuthor | device characteristics | - |
dc.subject.keywordAuthor | short channel effects | - |
dc.subject.keywordAuthor | structural variation | - |
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