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Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAMopen access

Authors
Sun, MinjaeBaac, Hyoung WonShin, Changhwan
Issue Date
9월-2022
Publisher
MDPI
Keywords
buried channel array transistor; device characteristics; short channel effects; structural variation
Citation
MICROMACHINES, v.13, no.9
Indexed
SCIE
SCOPUS
Journal Title
MICROMACHINES
Volume
13
Number
9
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/144090
DOI
10.3390/mi13091476
ISSN
2072-666X
Abstract
As the physical dimensions of cell transistors in dynamic random-access memory (DRAM) have been aggressively scaled down, buried-channel-array transistors (BCATs) have been adopted in industry to suppress short channel effects and to achieve a better performance. In very aggressively scaled-down BCATs, the impact of structural variations on the electrical characteristics can be more significant than expected. Using a technology computer-aided design (TCAD) tool, the structural variations in BCAT (e.g., the aspect ratio of the BCAT recess-to-gate length, BCAT depth, junction depth, fin width, and fin fillet radius) were simulated to enable a quantitative understanding of its impact on the device characteristics, such as the input/output characteristics, threshold voltage, subthreshold swing, on-/off-current ratio, and drain-induced barrier lowering. This work paves the road for the design of a variation-robust BCAT.
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공과대학 (전기전자공학부)
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