Active layer nitrogen doping technique with excellent thermal stability for resistive switching memristor
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, June | - |
dc.contributor.author | Park, Euyjin | - |
dc.contributor.author | Yu, Hyun-Yong | - |
dc.date.accessioned | 2022-11-17T10:40:52Z | - |
dc.date.available | 2022-11-17T10:40:52Z | - |
dc.date.created | 2022-11-17 | - |
dc.date.issued | 2022-11-30 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://scholar.korea.ac.kr/handle/2021.sw.korea/145628 | - |
dc.description.abstract | In this study, we propose a thermally stable memristor with nitrogen-doped hafnium oxide (HfO:N)-based resistive switching (RS) memory. The memristor with HfO:N as an active layer showed only a 7% change in the resistance in the high resistance state (HRS) after post-metal annealing (PMA) at 400 & DEG;C for 1 h. In contrast, the HfO2-based memristor exhibited an 83% change in the resistance at HRS after PMA at 400 & DEG;C for 1 h and lost RS operating characteristics after PMA over 400 & DEG;C. In addition, although the resistance of the HRS decreased by 80% after PMA at 550 & DEG;C for 1 h, the HfO:N-based memristor showed that the RS operation was maintained up to 550 & DEG;C. Through the nitrogen doping technique, a thermal budget of 550 & DEG;C can be achieved, which is one of the highest thermal budgets in RS memory with PMA. Such thermal stability enhancement of the memristor is a result of nitrogen doping, which improves the structural stability of the active layer and suppresses the gener-ation of oxygen vacancies in the active layer. This experimental approach can facilitate the development of advanced memristor devices with a good thermal budget of up to 550 & DEG;C. | - |
dc.language | English | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER | - |
dc.subject | MEMORY | - |
dc.subject | FILAMENT | - |
dc.subject | DEVICE | - |
dc.subject | FILMS | - |
dc.subject | RRAM | - |
dc.title | Active layer nitrogen doping technique with excellent thermal stability for resistive switching memristor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yu, Hyun-Yong | - |
dc.identifier.doi | 10.1016/j.apsusc.2022.154307 | - |
dc.identifier.scopusid | 2-s2.0-85135920970 | - |
dc.identifier.wosid | 000848497900004 | - |
dc.identifier.bibliographicCitation | APPLIED SURFACE SCIENCE, v.603 | - |
dc.relation.isPartOf | APPLIED SURFACE SCIENCE | - |
dc.citation.title | APPLIED SURFACE SCIENCE | - |
dc.citation.volume | 603 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | FILAMENT | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | RRAM | - |
dc.subject.keywordAuthor | Memristor | - |
dc.subject.keywordAuthor | Thermal stability | - |
dc.subject.keywordAuthor | Resistive random access memory (RRAM) | - |
dc.subject.keywordAuthor | Oxygen vacancy | - |
dc.subject.keywordAuthor | Post metal annealing | - |
dc.subject.keywordAuthor | Nitrogen doping | - |
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