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Active layer nitrogen doping technique with excellent thermal stability for resistive switching memristor

Authors
Park, JunePark, EuyjinYu, Hyun-Yong
Issue Date
30-11월-2022
Publisher
ELSEVIER
Keywords
Memristor; Thermal stability; Resistive random access memory (RRAM); Oxygen vacancy; Post metal annealing; Nitrogen doping
Citation
APPLIED SURFACE SCIENCE, v.603
Indexed
SCIE
SCOPUS
Journal Title
APPLIED SURFACE SCIENCE
Volume
603
URI
https://scholar.korea.ac.kr/handle/2021.sw.korea/145628
DOI
10.1016/j.apsusc.2022.154307
ISSN
0169-4332
Abstract
In this study, we propose a thermally stable memristor with nitrogen-doped hafnium oxide (HfO:N)-based resistive switching (RS) memory. The memristor with HfO:N as an active layer showed only a 7% change in the resistance in the high resistance state (HRS) after post-metal annealing (PMA) at 400 & DEG;C for 1 h. In contrast, the HfO2-based memristor exhibited an 83% change in the resistance at HRS after PMA at 400 & DEG;C for 1 h and lost RS operating characteristics after PMA over 400 & DEG;C. In addition, although the resistance of the HRS decreased by 80% after PMA at 550 & DEG;C for 1 h, the HfO:N-based memristor showed that the RS operation was maintained up to 550 & DEG;C. Through the nitrogen doping technique, a thermal budget of 550 & DEG;C can be achieved, which is one of the highest thermal budgets in RS memory with PMA. Such thermal stability enhancement of the memristor is a result of nitrogen doping, which improves the structural stability of the active layer and suppresses the gener-ation of oxygen vacancies in the active layer. This experimental approach can facilitate the development of advanced memristor devices with a good thermal budget of up to 550 & DEG;C.
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공과대학 (전기전자공학부)
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