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Tunable, High-Performance Switching in Silicon-Oxide(SiOx) Memristor Enabled by a Vertically Integrated Graphene BarristorTunable, High-Performance Switching in Silicon-Oxide(SiOx) Memristor Enabled by a Vertically Integrated Graphene Barristor
- Alternative Title
- Tunable, High-Performance Switching in Silicon-Oxide(SiOx) Memristor Enabled by a Vertically Integrated Graphene Barristor
- Authors
- Gunuk Wang
- Issue Date
- 11-7월-2018
- Publisher
- 나노기술협의회
- Citation
- NANO KOREA (2018)
- Conference Name
- NANO KOREA (2018)
- Place
- KO
- Conference Date
- 2018-07-11
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