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Gate-tunable 2D memristor devices based on monolithically-integrated vertical heterojunctionsGate-tunable 2D memristor devices based on monolithically-integrated vertical heterojunctions
- Alternative Title
- Gate-tunable 2D memristor devices based on monolithically-integrated vertical heterojunctions
- Authors
- Lee, Chul-Ho
- Issue Date
- 22-11월-2017
- Publisher
- The Korean Institute of Electrical and Electronic Material Engineers
- Citation
- Th 4th International Conference on Advanced Electromaterials (ICAE)
- Conference Name
- Th 4th International Conference on Advanced Electromaterials (ICAE)
- Place
- KO
- Conference Date
- 2017-11-21
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