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Memory TFT Application: Under 150 °C, Low Temperature Processed Oxide TFT with Mobile Proton Inserted Gate Dielectric for Stretchable AMOLEDMemory TFT Application: Under 150 °C, Low Temperature Processed Oxide TFT with Mobile Proton Inserted Gate Dielectric for Stretchable AMOLED
- Alternative Title
- Memory TFT Application: Under 150 °C, Low Temperature Processed Oxide TFT with Mobile Proton Inserted Gate Dielectric for Stretchable AMOLED
- Authors
- Hong MunPyo
- Issue Date
- 31-8월-2017
- Publisher
- The Korean information Display Society (KIDS), The Society for Information Display (SID), Korea Disp
- Citation
- iMiD2017
- Conference Name
- iMiD2017
- Place
- KO
- Conference Date
- 2017-08-28
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Collections - Graduate School > Department of Applied Physics > 2. Conference Papers
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